Temperature Characteristics and Junction Temperature Estimation Methods for SiC MOSFET and Si IGBT
The output characteristic test circuit, leakage current test circuit and double pulse test circuit were set up to study the effect of temperature characteristics of 1 200 V SiC MOSFET and 1 200 V Si IGBT on output characteristic, leakage current, switch characteristic and the loss. Based on the vari...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.014 |
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