Role of Oxygen Vacancy in the Performance Variability and Lattice Temperature of the Stacked Nanosheet FET
We have carried out a detailed study of the impact of oxygen vacancies (O<inline-formula> <tex-math notation="LaTeX">$_{\mathrm {V}}$ </tex-math></inline-formula>), on the performance and the lattice temperature variation in a stacked silicon nanosheet field effect...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10741537/ |
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