Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms

Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms

Abstract The enormous energy consumption of modern machine learning technologies, such as deep learning and generative artificial intelligence, is one of the most critical concerns of the time. To solve this problem, physical reservoir computing, which uses the non‐linear dynamics exhibited by mecha...

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Bibliographic Details
Main Authors: Takashi Tsuchiya, Daiki Nishioka, Wataru Namiki, Kazuya Terabe
Format: Article
Language:English
Published: Wiley-VCH 2024-12-01
Series:Advanced Electronic Materials
Subjects:
ion‐gating reservoirs
ion‐gating transistors
reservoir computing
solid state ionics
Online Access:https://doi.org/10.1002/aelm.202400625
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