Tunable Negative Differential Resistance in SnO2:Co Memristors on p-Si
This study investigates the negative differential resistance (NDR) phenomenon in cobalt-doped tin dioxide (SnO2:Co) memristors fabricated on p-type silicon substrates. Using ultrasonic spray pyrolysis (USP), crystalline SnO2:Co thin films were deposited on p-Si substrates with a thin native SiO2 lay...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
V.N. Karazin Kharkiv National University Publishing
2025-06-01
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| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/25765 |
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| Summary: | This study investigates the negative differential resistance (NDR) phenomenon in cobalt-doped tin dioxide (SnO2:Co) memristors fabricated on p-type silicon substrates. Using ultrasonic spray pyrolysis (USP), crystalline SnO2:Co thin films were deposited on p-Si substrates with a thin native SiO2 layer. The resulting memristor devices exhibit reproducible bipolar resistive switching between high-resistance (HRS) and low-resistance states (LRS). Key findings include the observation of a distinct NDR region in the current-voltage (I-V) characteristics, specifically in the positive voltage range from approximately +3V to +4V. Within this NDR region, current decreases despite increasing voltage, a characteristic hallmark of this effect. This behavior is attributed to the charge trapping and redistribution within the Co:SnO2 material. The consistent and reproducible nature of the observed NDR effect suggests the potential of SnO2:Co memristors for applications in advanced memory and switching technologies. This work contributes to the understanding of resistive switching mechanisms in Co-doped SnO2 thin films, which are promising materials for next-generation memory devices. |
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| ISSN: | 2312-4334 2312-4539 |