Tunable Negative Differential Resistance in SnO2:Co Memristors on p-Si

Tunable Negative Differential Resistance in SnO2:Co Memristors on p-Si

This study investigates the negative differential resistance (NDR) phenomenon in cobalt-doped tin dioxide (SnO2:Co) memristors fabricated on p-type silicon substrates. Using ultrasonic spray pyrolysis (USP), crystalline SnO2:Co thin films were deposited on p-Si substrates with a thin native SiO2 lay...

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Bibliographic Details
Main Authors: Jamoliddin X. Murodov, Shavkat U. Yuldashev, Azamat O. Arslanov, Marguba S. Mirkamilova, Utkur E. Jurayev
Format: Article
Language:English
Published: V.N. Karazin Kharkiv National University Publishing 2025-06-01
Series:East European Journal of Physics
Subjects:
sno2 doped by cobalt
memristor
negative differential resistance switching
usp
Online Access:https://periodicals.karazin.ua/eejp/article/view/25765
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