Radiation effects of 5 MeV proton on Ni/β-Ga2O3 Schottky barrier diodes
This study investigated the effects of 5 MeV proton irradiation on the static electrical characteristics of Ni/β-Ga2O3 Schottky barrier diodes without and with NiO rings (SBDs and RSBDs), with a total irradiation fluence of 1 × 1013 cm−2. The results indicated that the proton irradiation damage decr...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2024-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0242811 |
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| author | Hao Chen Leidang Zhou Teng Ma Penghui Zhao Liang Chen Tao Yang Zhifeng Lei Xing Lu Sen Yang Xiaoping Ouyang |
| author_facet | Hao Chen Leidang Zhou Teng Ma Penghui Zhao Liang Chen Tao Yang Zhifeng Lei Xing Lu Sen Yang Xiaoping Ouyang |
| author_sort | Hao Chen |
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| description | This study investigated the effects of 5 MeV proton irradiation on the static electrical characteristics of Ni/β-Ga2O3 Schottky barrier diodes without and with NiO rings (SBDs and RSBDs), with a total irradiation fluence of 1 × 1013 cm−2. The results indicated that the proton irradiation damage decreased the current level of the SBDs and RSBDs due to the reduced net carrier concentration of β-Ga2O3 by about 50% other than the impact on the Schottky contact. On the one hand, the reduced net carrier concentration increased the on-resistance, resulting in a reduction in the forward saturation current by approximately one order of magnitude. On the other hand, because the leakage current mechanism was dominated by the Poole–Frenkel emission process and Fowler–Nordheim tunneling process, the reduced net carrier concentration degraded the electric fields in the irradiated SBDs and RSBDs, reducing the effect of the NiO guard ring and, meanwhile, leading to a lower leakage current after proton irradiation. In addition to being associated with the temperature-dependent current–voltage (I–V–T) results, the proton irradiation also suppressed the Poole–Frenkel emission process and increased the tunneling barrier height of SBDs and RSBDs. In this case, the breakdown voltage of the SBDs and RSBDs increased by approximately 2–4 times. In addition, the Technology Computer Aided Design simulations showed a reduced discrepancy between the peaks of the electric field of SBDs and RSBDs after irradiation, leading to the comparable leakage current of SBDs and RSBDs, which confirmed the weakening of the NiO guard ring’s effect. |
| format | Article |
| id | doaj-art-9c37cb42e119473f97865573582f1aba |
| institution | Kabale University |
| issn | 2166-532X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-9c37cb42e119473f97865573582f1aba2025-01-02T17:16:14ZengAIP Publishing LLCAPL Materials2166-532X2024-12-011212121114121114-810.1063/5.0242811Radiation effects of 5 MeV proton on Ni/β-Ga2O3 Schottky barrier diodesHao Chen0Leidang Zhou1Teng Ma2Penghui Zhao3Liang Chen4Tao Yang5Zhifeng Lei6Xing Lu7Sen Yang8Xiaoping Ouyang9School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaSchool of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of ChinaRadiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi’an 710024, ChinaSchool of Instrument Science and Technology, Xi’an Jiaotong University, Xi’an 710049, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, ChinaSchool of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of ChinaRadiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi’an 710024, ChinaThis study investigated the effects of 5 MeV proton irradiation on the static electrical characteristics of Ni/β-Ga2O3 Schottky barrier diodes without and with NiO rings (SBDs and RSBDs), with a total irradiation fluence of 1 × 1013 cm−2. The results indicated that the proton irradiation damage decreased the current level of the SBDs and RSBDs due to the reduced net carrier concentration of β-Ga2O3 by about 50% other than the impact on the Schottky contact. On the one hand, the reduced net carrier concentration increased the on-resistance, resulting in a reduction in the forward saturation current by approximately one order of magnitude. On the other hand, because the leakage current mechanism was dominated by the Poole–Frenkel emission process and Fowler–Nordheim tunneling process, the reduced net carrier concentration degraded the electric fields in the irradiated SBDs and RSBDs, reducing the effect of the NiO guard ring and, meanwhile, leading to a lower leakage current after proton irradiation. In addition to being associated with the temperature-dependent current–voltage (I–V–T) results, the proton irradiation also suppressed the Poole–Frenkel emission process and increased the tunneling barrier height of SBDs and RSBDs. In this case, the breakdown voltage of the SBDs and RSBDs increased by approximately 2–4 times. In addition, the Technology Computer Aided Design simulations showed a reduced discrepancy between the peaks of the electric field of SBDs and RSBDs after irradiation, leading to the comparable leakage current of SBDs and RSBDs, which confirmed the weakening of the NiO guard ring’s effect.http://dx.doi.org/10.1063/5.0242811 |
| spellingShingle | Hao Chen Leidang Zhou Teng Ma Penghui Zhao Liang Chen Tao Yang Zhifeng Lei Xing Lu Sen Yang Xiaoping Ouyang Radiation effects of 5 MeV proton on Ni/β-Ga2O3 Schottky barrier diodes APL Materials |
| title | Radiation effects of 5 MeV proton on Ni/β-Ga2O3 Schottky barrier diodes |
| title_full | Radiation effects of 5 MeV proton on Ni/β-Ga2O3 Schottky barrier diodes |
| title_fullStr | Radiation effects of 5 MeV proton on Ni/β-Ga2O3 Schottky barrier diodes |
| title_full_unstemmed | Radiation effects of 5 MeV proton on Ni/β-Ga2O3 Schottky barrier diodes |
| title_short | Radiation effects of 5 MeV proton on Ni/β-Ga2O3 Schottky barrier diodes |
| title_sort | radiation effects of 5 mev proton on ni β ga2o3 schottky barrier diodes |
| url | http://dx.doi.org/10.1063/5.0242811 |
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