Radiation effects of 5 MeV proton on Ni/β-Ga2O3 Schottky barrier diodes
This study investigated the effects of 5 MeV proton irradiation on the static electrical characteristics of Ni/β-Ga2O3 Schottky barrier diodes without and with NiO rings (SBDs and RSBDs), with a total irradiation fluence of 1 × 1013 cm−2. The results indicated that the proton irradiation damage decr...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0242811 |
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