p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications

p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications

This study integrates a p-type copper gallium oxide (p-CuGaO2) interlayer to enhance the performance of β-Ga2O3-based power devices, addressing challenges in achieving reliable p-type doping. The p-CuGaO2 interlayer is expected to improve breakdown voltage (BV) and reduce leakage current, increasing...

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Main Authors: Chowdam Venkata Prasad, Jang Hyeok Park, Qui Thanh Hoai Ta, Kyong Jae Kim, Ho Jung Jeon, Muzaffar Ali Mir, Mohsin Raza, Nguyen Ngoc Tri, Honggyun Kim, Madani Labed, You Seung Rim
Format: Article
Language:English
Published: Elsevier 2025-06-01
Series:Materials Today Advances
Subjects:
p-CuGaO2
β-Ga2O3
Heterojunction
Density functional theory (DFT)
Breakdown voltage
Interface state density
Online Access:http://www.sciencedirect.com/science/article/pii/S2590049825000220
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Summary:This study integrates a p-type copper gallium oxide (p-CuGaO2) interlayer to enhance the performance of β-Ga2O3-based power devices, addressing challenges in achieving reliable p-type doping. The p-CuGaO2 interlayer is expected to improve breakdown voltage (BV) and reduce leakage current, increasing device efficiency and reliability under high-temperature conditions. The heterojunction (HJ) system of β-Ga2O3 and p-CuGaO2 is investigated using density functional theory (DFT) via the Vienna Ab initio Simulation Package (VASP) and experimental methods, focusing on the β-Ga2O3 (001)/p-CuGaO2 (006) interface. Binding energy, electron localization, charge density difference, and electrostatic potential drop are analyzed, identifying Configuration-1 as the optimal configuration due to its high binding energy and favorable structural properties. Annealing temperature impacts the microstructure, stoichiometry, optical, electrical, and transport properties of p-CuGaO2/β-Ga2O3 HJs. Electrical measurements reveal reduced turn-on voltage (Von), on-resistance (Ron), and leakage currents, with the highest BV of 1.62 kV achieved at 800 °C compared to Pt/β-Ga2O3 Schottky barrier diode (SBD). The interface state density (NSS) is evaluated using the high-low frequency approach. Silvaco TCAD simulations explore breakdown mechanisms, demonstrating the potential of p-CuGaO2 for β-Ga2O3 HJ power devices. These findings support the development and manufacture of robust β-Ga2O3 HJ power devices.
ISSN:2590-0498

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