A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities

A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities

Abstract A highly efficient approach for synthesizing a supramolecular metallogel of Co(II) ions, denoted as CoA-TA, has been established under room temperature and atmospheric pressure conditions. This method employs the metal-coordinating organic ligand benzene-1,3,5-tricarboxylic acid as a low mo...

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Bibliographic Details
Main Authors: Arpita Roy, Subhendu Dhibar, Saurav Kumar, Kripasindhu Karmakar, Parul Garg, Pradip Ruidas, Subham Bhattacharjee, Ashok Bera, Bidyut Saha, Soumya Jyoti Ray
Format: Article
Language:English
Published: Nature Portfolio 2024-11-01
Series:Scientific Reports
Subjects:
Supramolecular Cobalt(II) Metallogel
Rheology
Microstructure
Resistive random access memory device
Electronic device
Non-volatile memory
Online Access:https://doi.org/10.1038/s41598-024-74994-1
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https://doi.org/10.1038/s41598-024-74994-1

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