Demonstration of high Johnson’s figure of merit (ft × VBR >20 THz·V) and fmax × VBR (>42 THz·V) for Al0.66Ga0.34N channel MISHEMT on bulk AlN substrates

Demonstration of high Johnson’s figure of merit (ft × VBR >20 THz·V) and fmax × VBR (>42 THz·V) for Al0.66Ga0.34N channel MISHEMT on bulk AlN substrates

In this paper, a metal-organic chemical vapor deposition (MOCVD) grown Al _0.66 Ga _0.34 N channel metal-insulator-semiconductor-high-electron-mobility-transistor (MISHEMT) with a scaled T-gate structure was fabricated on a single-crystal bulk AlN substrate. A device with 4 μm source-to-drain spacin...

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Bibliographic Details
Main Authors: Ruixin Bai, Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Jiahao Chen, MD Tahmidul Alam, Shuwen Xie, Shubhra S. Pasayat, Chirag Gupta
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
Aluminum gallium nitride
ultra-wide bandgap
RF devices
bulk AlN substrate
High-Electron-Mobility-Transistor
Johnson’s figure of merit
Online Access:https://doi.org/10.35848/1882-0786/adf373
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https://doi.org/10.35848/1882-0786/adf373

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