Dislocation-assisted electron and hole transport in GaN epitaxial layers

Dislocation-assisted electron and hole transport in GaN epitaxial layers

Abstract Dislocations significantly influence carrier transport in semiconductors. While segments orthogonal to the channel act as scattering centers impeding conduction, electrically active dislocation cores can facilitate carrier transport. However, the mechanisms governing carrier transport along...

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Main Authors: Yixu Yao, Sen Huang, Ruyue Cao, Zhaofu Zhang, Xinhua Wang, Qimeng Jiang, Jingyuan Shi, Chenrui Zhang, Jiaolong Liu, Ke Wei, Yi Pei, Hui Zhang, Hongtu Qian, Fuqiang Guo, Guoping Li, Ning Tang, Jun-Wei Luo, Weikun Ge, Xinyu Liu, Bo Shen, Kevin J. Chen
Format: Article
Language:English
Published: Nature Portfolio 2025-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-61510-w
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https://doi.org/10.1038/s41467-025-61510-w

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