Research on the Reliability of Aluminum Nitride Ceramic Substrate for IGBT
With the rapid development and widespread use of power electronic devices, especially high voltage and high current IGBT modules, higher performance is put forward for ceramic substrate in package materials, and reliability requirements are one of the most critical indicators for the design of ceram...
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| Format: | Article |
| Language: | zho |
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Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.009 |
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| author | QIAN Jianbo HUANG Shidong |
| author_facet | QIAN Jianbo HUANG Shidong |
| author_sort | QIAN Jianbo |
| collection | DOAJ |
| description | With the rapid development and widespread use of power electronic devices, especially high voltage and high current IGBT modules, higher performance is put forward for ceramic substrate in package materials, and reliability requirements are one of the most critical indicators for the design of ceramic substrate. In the field of high voltage and high power IGBT module package, active metal brazing (AMB) AlN substrate is the best choice due to its high reliability. In this paper, the peel strength and thermal shock resistance of AlN ceramic substrate prepared by AMB process and DBC (direct bond copper) process were compared, and the reliability of AMB-AlN substrate can be improved by controlling the thickness of its TiN layer, increasing the depth of its copper edge holes and increasing the side etching of copper coil. The results show that the thermal shock can be 1300 times, the peel strength can be 18 N/mm, and the void ratio can be 0%. Its performance is better than the foreign product and can meet the package application requirement of high voltage and high power IGBT module. |
| format | Article |
| id | doaj-art-924de8af2a4441f38f6189b4f1b867ab |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2017-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-924de8af2a4441f38f6189b4f1b867ab2025-08-25T06:53:14ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272017-01-0134555982320446Research on the Reliability of Aluminum Nitride Ceramic Substrate for IGBTQIAN JianboHUANG ShidongWith the rapid development and widespread use of power electronic devices, especially high voltage and high current IGBT modules, higher performance is put forward for ceramic substrate in package materials, and reliability requirements are one of the most critical indicators for the design of ceramic substrate. In the field of high voltage and high power IGBT module package, active metal brazing (AMB) AlN substrate is the best choice due to its high reliability. In this paper, the peel strength and thermal shock resistance of AlN ceramic substrate prepared by AMB process and DBC (direct bond copper) process were compared, and the reliability of AMB-AlN substrate can be improved by controlling the thickness of its TiN layer, increasing the depth of its copper edge holes and increasing the side etching of copper coil. The results show that the thermal shock can be 1300 times, the peel strength can be 18 N/mm, and the void ratio can be 0%. Its performance is better than the foreign product and can meet the package application requirement of high voltage and high power IGBT module.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.009IGBT moduleAlN ceramic substrateactive metal brazing(AMB)reliability |
| spellingShingle | QIAN Jianbo HUANG Shidong Research on the Reliability of Aluminum Nitride Ceramic Substrate for IGBT Kongzhi Yu Xinxi Jishu IGBT module AlN ceramic substrate active metal brazing(AMB) reliability |
| title | Research on the Reliability of Aluminum Nitride Ceramic Substrate for IGBT |
| title_full | Research on the Reliability of Aluminum Nitride Ceramic Substrate for IGBT |
| title_fullStr | Research on the Reliability of Aluminum Nitride Ceramic Substrate for IGBT |
| title_full_unstemmed | Research on the Reliability of Aluminum Nitride Ceramic Substrate for IGBT |
| title_short | Research on the Reliability of Aluminum Nitride Ceramic Substrate for IGBT |
| title_sort | research on the reliability of aluminum nitride ceramic substrate for igbt |
| topic | IGBT module AlN ceramic substrate active metal brazing(AMB) reliability |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.009 |
| work_keys_str_mv | AT qianjianbo researchonthereliabilityofaluminumnitrideceramicsubstrateforigbt AT huangshidong researchonthereliabilityofaluminumnitrideceramicsubstrateforigbt |