Development of the 4 500 V IGBT Device with Low On-state Loss and Wide Safe Operation Area
Based on the “U” shape enhanced double diffused metal oxide semiconductor (DMOS+) planar gate cell structure, enhanced controllable punch through (CPT+) and junction termination extension structure, a strong turn-off current capability and wide short circuit safe operation area 4 500 V IGBT chip was...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2017-01-01
|
| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.010 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|