Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method
Field-effect mobility ( μ _FE ), calculated using transconductance in thin-film transistors (TFTs) includes error factors from determination of channel width/length and parasitic resistance ( R _s/d ) at source and drain regions. The apparent μ _FE is generally underestimated owing to the drain volt...
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ada19e |
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| author | Takanori Takahashi Yukiharu Uraoka |
| author_facet | Takanori Takahashi Yukiharu Uraoka |
| author_sort | Takanori Takahashi |
| collection | DOAJ |
| description | Field-effect mobility ( μ _FE ), calculated using transconductance in thin-film transistors (TFTs) includes error factors from determination of channel width/length and parasitic resistance ( R _s/d ) at source and drain regions. The apparent μ _FE is generally underestimated owing to the drain voltage drop due to R _s/d , which in turn, is caused by a low channel resistance ( R _ch ) in high-mobility channels. This letter describes the extraction of intrinsic μ _FE ( μ _FEi ) in TFTs with polycrystalline In _2 O _3 channels by separating R _s/d and R _ch , based on the transfer length method. Using the proposed methodology, we obtained a high μ _FEi (>100 cm ^2 Vs ^−1 ) from TFT. |
| format | Article |
| id | doaj-art-89f8a2b0b05e4cd58705a60b77fd4f22 |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-89f8a2b0b05e4cd58705a60b77fd4f222025-01-06T11:00:03ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101400110.35848/1882-0786/ada19eIntrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length methodTakanori Takahashi0Yukiharu Uraoka1Graduate School of Materials Science, Nara Institute of Science and Technology , 8916-5 Takayama-cho, Ikoma, Nara, 630-0192, JapanGraduate School of Materials Science, Nara Institute of Science and Technology , 8916-5 Takayama-cho, Ikoma, Nara, 630-0192, JapanField-effect mobility ( μ _FE ), calculated using transconductance in thin-film transistors (TFTs) includes error factors from determination of channel width/length and parasitic resistance ( R _s/d ) at source and drain regions. The apparent μ _FE is generally underestimated owing to the drain voltage drop due to R _s/d , which in turn, is caused by a low channel resistance ( R _ch ) in high-mobility channels. This letter describes the extraction of intrinsic μ _FE ( μ _FEi ) in TFTs with polycrystalline In _2 O _3 channels by separating R _s/d and R _ch , based on the transfer length method. Using the proposed methodology, we obtained a high μ _FEi (>100 cm ^2 Vs ^−1 ) from TFT.https://doi.org/10.35848/1882-0786/ada19ethin-film transistorsoxide semiconductorsmobilityintrinsic field-effect mobilityIn2O3 |
| spellingShingle | Takanori Takahashi Yukiharu Uraoka Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method Applied Physics Express thin-film transistors oxide semiconductors mobility intrinsic field-effect mobility In2O3 |
| title | Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method |
| title_full | Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method |
| title_fullStr | Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method |
| title_full_unstemmed | Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method |
| title_short | Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method |
| title_sort | intrinsic field effect mobility in thin film transistor with polycrystalline in2o3 channel based on transfer length method |
| topic | thin-film transistors oxide semiconductors mobility intrinsic field-effect mobility In2O3 |
| url | https://doi.org/10.35848/1882-0786/ada19e |
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