Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method
Field-effect mobility ( μ _FE ), calculated using transconductance in thin-film transistors (TFTs) includes error factors from determination of channel width/length and parasitic resistance ( R _s/d ) at source and drain regions. The apparent μ _FE is generally underestimated owing to the drain volt...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ada19e |
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