Investigation of the possibility of implementing a mid-frequency broadband swept-frequency generator based on the structure of semi-insulating gallium arsenide

Background and Objectives: In previous works, the authors of the article reported on the prospects of creating the functional microelectronic devices with wide functionality based on the semi-insulating gallium arsenide (GaAs) structures provided that they exhibit Gunn or recombination current insta...

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Bibliographic Details
Main Authors: Mikhailov, Aleksandr Ivanovich, Kozhevnikov, Ilya Olegovich, Mitin, Anton V.
Format: Article
Language:English
Published: Saratov State University 2024-12-01
Series:Известия Саратовского университета. Новая серия Серия: Физика
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Online Access:https://fizika.sgu.ru/sites/fizika.sgu.ru/files/text-pdf/2024/12/physics_04_2024_v-91-96.pdf
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