Investigation of the possibility of implementing a mid-frequency broadband swept-frequency generator based on the structure of semi-insulating gallium arsenide
Background and Objectives: In previous works, the authors of the article reported on the prospects of creating the functional microelectronic devices with wide functionality based on the semi-insulating gallium arsenide (GaAs) structures provided that they exhibit Gunn or recombination current insta...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Saratov State University
2024-12-01
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| Series: | Известия Саратовского университета. Новая серия Серия: Физика |
| Subjects: | |
| Online Access: | https://fizika.sgu.ru/sites/fizika.sgu.ru/files/text-pdf/2024/12/physics_04_2024_v-91-96.pdf |
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