On the structural and bandgap properties of mist-CVD-grown κ-Ga2O3 post continuous temperature annealing

On the structural and bandgap properties of mist-CVD-grown κ-Ga2O3 post continuous temperature annealing

We investigate the continuous annealing of orthorhombic κ-Ga2O3 films on AlN/c-plane sapphire templates grown by Mist Chemical Vapor Deposition (mist-CVD) using in situ high-temperature x-ray diffraction (HT-XRD). Increasing the annealing temperature from 400 to 1100 °C in both vacuum and ambient ai...

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Main Authors: Yara Banda, Yanqing Jia, Seong-Ho Cho, Bambar Davaasuren, Mohamed Ben Hassine, Qingxiao Wang, Dalaver H. Anjum, Qiaoqiang Gan, Zhenqiang Ma, Si-Young Bae, Tien Khee Ng, Boon S. Ooi
Format: Article
Language:English
Published: AIP Publishing LLC 2024-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0233281
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http://dx.doi.org/10.1063/5.0233281

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