Influence and reinforcement of gate bias on total dose effect of SiC MOSFET
To address the MOSFETs threshold drift caused by the total dose effect, 1 200 V SiC MOSFETs were used for irradiation experiments. The effect and mechanism of gate bias voltage and high-temperature gate bias annealing after irradiation on the threshold drift of MOSFETs were investigated. Through the...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2023-09-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.006 |
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| Summary: | To address the MOSFETs threshold drift caused by the total dose effect, 1 200 V SiC MOSFETs were used for irradiation experiments. The effect and mechanism of gate bias voltage and high-temperature gate bias annealing after irradiation on the threshold drift of MOSFETs were investigated. Through the analysis using the midband voltage method, it was found that the negative threshold drift was mainly caused by the capture of the irradiation-generated holes by near-interface traps. Experiments and analysis on SiC MOSFETs prepared with different gate oxide annealing conditions revealed that a compromise was needed to consider the effect on channel mobility when performing total dose effect reinforcement by nitride gas annealing. And it was found that the MOSFETs prepared under the annealing condition of 5% nitride gas fraction and 60 min at 1 300 °C had high channel mobility and strong resistance to total dose effect. |
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| ISSN: | 1000-128X |