Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module
Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC m...
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| Format: | Article |
| Language: | English |
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Gruppo Italiano Frattura
2020-12-01
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| Series: | Fracture and Structural Integrity |
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| Online Access: | https://www.fracturae.com/index.php/fis/article/view/2941 |
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| author | Dianhao Zhang Xiao-guang Huang Bin-liang Cheng Neng Zhang |
| author_facet | Dianhao Zhang Xiao-guang Huang Bin-liang Cheng Neng Zhang |
| author_sort | Dianhao Zhang |
| collection | DOAJ |
| description | Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC materials and IGBT devices, and becomes an ideal device for high-frequency and high-temperature electronic devices. Even so, the thermal fatigue failure of SiC IGBT, which directly determines its application and promotion, is a problem worthy of attention. In this study, the thermal fatigue behavior of SiC-IGBT under cyclic temperature cycles was investigated by finite element method. The finite element thermomechanical model was established, and stress-strain distribution and creep characteristics of the SnAgCu solder layer were obtained. The thermal fatigue life of the solder was predicted by the creep, shear strain and energy model respectively, and the failure position and factor of failure were discussed. |
| format | Article |
| id | doaj-art-7f81d6d5200144f8868f1d80ae968e75 |
| institution | Kabale University |
| issn | 1971-8993 |
| language | English |
| publishDate | 2020-12-01 |
| publisher | Gruppo Italiano Frattura |
| record_format | Article |
| series | Fracture and Structural Integrity |
| spelling | doaj-art-7f81d6d5200144f8868f1d80ae968e752025-01-03T00:39:58ZengGruppo Italiano FratturaFracture and Structural Integrity1971-89932020-12-01155510.3221/IGF-ESIS.55.24Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power moduleDianhao Zhang0Xiao-guang HuangBin-liang Cheng1Neng Zhang2College of Pipeline and Civil Engineering, China University of Petroleum (East China), Qingdao, 266580, China. College of Pipeline and Civil Engineering, China University of Petroleum (East China), Qingdao, 266580, ChinaCollege of Pipeline and Civil Engineering, China University of Petroleum (East China), Qingdao, 266580, China. Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC materials and IGBT devices, and becomes an ideal device for high-frequency and high-temperature electronic devices. Even so, the thermal fatigue failure of SiC IGBT, which directly determines its application and promotion, is a problem worthy of attention. In this study, the thermal fatigue behavior of SiC-IGBT under cyclic temperature cycles was investigated by finite element method. The finite element thermomechanical model was established, and stress-strain distribution and creep characteristics of the SnAgCu solder layer were obtained. The thermal fatigue life of the solder was predicted by the creep, shear strain and energy model respectively, and the failure position and factor of failure were discussed.https://www.fracturae.com/index.php/fis/article/view/2941SiC-IGBTthermal cyclethermal fatigue lifecreepsolder layer |
| spellingShingle | Dianhao Zhang Xiao-guang Huang Bin-liang Cheng Neng Zhang Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module Fracture and Structural Integrity SiC-IGBT thermal cycle thermal fatigue life creep solder layer |
| title | Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module |
| title_full | Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module |
| title_fullStr | Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module |
| title_full_unstemmed | Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module |
| title_short | Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module |
| title_sort | numerical analysis and thermal fatigue life prediction of solder layer in a sic igbt power module |
| topic | SiC-IGBT thermal cycle thermal fatigue life creep solder layer |
| url | https://www.fracturae.com/index.php/fis/article/view/2941 |
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