Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module
Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC m...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Gruppo Italiano Frattura
2020-12-01
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| Series: | Fracture and Structural Integrity |
| Subjects: | |
| Online Access: | https://www.fracturae.com/index.php/fis/article/view/2941 |
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