Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors
We present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP). These detectors are monolithically integrated with various antenna designs and exhibit state-of-the-art performance at room te...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/25/11/3539 |
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| Summary: | We present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP). These detectors are monolithically integrated with various antenna designs and exhibit state-of-the-art performance at room temperature. Their architecture enables straightforward scaling to two-dimensional formats, paving the way for terahertz focal plane arrays (FPAs). In particular, for one detector type, a fully realized THz FPA has been demonstrated in this paper. Theoretical and experimental characterizations are provided for both single-pixel detectors (0.1–1.5 THz) and the FPA (0.1–1.1 THz). The broadband single detectors achieve optical sensitivities exceeding 20 mA/W up to 1 THz and NEP values below 100 pW/<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msqrt><mi>Hz</mi></msqrt></semantics></math></inline-formula>. The best optical NEP is below 10 pW/<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msqrt><mi>Hz</mi></msqrt></semantics></math></inline-formula> at 175 GHz. The reported sensitivity and NEP values were achieved including antenna and optical coupling losses, underlining the excellent overall performance of the detectors. |
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| ISSN: | 1424-8220 |