Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors

Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors

We present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP). These detectors are monolithically integrated with various antenna designs and exhibit state-of-the-art performance at room te...

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Bibliographic Details
Main Authors: Adam Rämer, Edoardo Negri, Eugen Dischke, Serguei Chevchenko, Hossein Yazdani, Lars Schellhase, Viktor Krozer, Wolfgang Heinrich
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Sensors
Subjects:
room-temperature THz direct detectors
THz HEMT antenna integration
resistive mixing
on-chip antenna
TeraFET
Online Access:https://www.mdpi.com/1424-8220/25/11/3539
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