An Electrode Design Strategy to Minimize Ferroelectric Imprint Effect
Abstract The phenomenon of ferroelectric imprint, characterized by an asymmetric polarization switching behavior, poses significant challenges in the reliability and performance of ultra‐low‐voltage ferroelectric devices, including MagnetoElectric Spin‐Orbit devices, Ferroelectric Random‐Access Memo...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2025-08-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.70011 |
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