An Electrode Design Strategy to Minimize Ferroelectric Imprint Effect

An Electrode Design Strategy to Minimize Ferroelectric Imprint Effect

Abstract The phenomenon of ferroelectric imprint, characterized by an asymmetric polarization switching behavior, poses significant challenges in the reliability and performance of ultra‐low‐voltage ferroelectric devices, including MagnetoElectric Spin‐Orbit devices, Ferroelectric Random‐Access Memo...

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Main Authors: Yu‐Wei Chen, Tung‐Yuan Yu, Chun‐Wei Huang, Tzu‐Hsuan Yu, Yung‐Chi Su, Chao‐Rung Chen, Wei‐Chen Hung, Pei‐Yin Chang, Bhagwati Prasad, Yu‐Chuan Lin, Ramamoorthy Ramesh, Yen‐Lin Huang
Format: Article
Language:English
Published: Wiley 2025-08-01
Series:Advanced Science
Subjects:
Ferroelectrics
imprint
reliability
retention
ultra‐low‐voltage
Online Access:https://doi.org/10.1002/advs.70011
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https://doi.org/10.1002/advs.70011

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