A new critical growth parameter of H2/CH4 gas flow ratio and mechanistic model for SiC nanowire synthesis via Si substrate carbonization
Abstract SiC structures, including nanowires and films, can be effectively grown on Si substrates through carbonization. However, growth parameters other than temperature, which influence the preferential formation of SiC nanowires or films, have not yet been identified. In this work, we investigate...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-11-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-81254-9 |
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