Structural and optical properties of Eu-doped ZnO epitaxial thin films grown by pulsed-laser deposition
Pulsed-laser deposition was utilized to fabricate Eu-doped ZnO epitaxial films on c-plane sapphire substrates with Eu concentrations ranging from 0.5 to 4.0 at. %. The structural properties were analyzed using x-ray diffraction surface normal radial scans and azimuthal cone scans, which confirmed th...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2024-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0234509 |
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| author | Wei-Lun Wei Chun-Yen Lin Tzu-Chi Huang Yi-Chen Li Yu-Hao Wu Chien-Yu Lee Bo-Yi Chen Gung-Chian Yin Mau-Tsu Tang Wu-Ching Chou Fang-Yuh Lo Bi-Hsuan Lin |
| author_facet | Wei-Lun Wei Chun-Yen Lin Tzu-Chi Huang Yi-Chen Li Yu-Hao Wu Chien-Yu Lee Bo-Yi Chen Gung-Chian Yin Mau-Tsu Tang Wu-Ching Chou Fang-Yuh Lo Bi-Hsuan Lin |
| author_sort | Wei-Lun Wei |
| collection | DOAJ |
| description | Pulsed-laser deposition was utilized to fabricate Eu-doped ZnO epitaxial films on c-plane sapphire substrates with Eu concentrations ranging from 0.5 to 4.0 at. %. The structural properties were analyzed using x-ray diffraction surface normal radial scans and azimuthal cone scans, which confirmed the epitaxy of the film samples. Reciprocal space mapping was performed on ZnO(101̄1) to visualize the effect of Eu incorporation. X-ray fluorescence mapping confirmed the homogeneous distribution of Zn and Eu, and x-ray absorption near-edge structure spectra directly confirmed the trivalent state of Eu ions. The optical properties were assessed using temperature-dependent photoluminescence (PL). Various defects were identified. With increasing Eu dopant concentration, PL emissions from defects and the Eu 4f-intraband transitions gradually became the predominant features in the PL spectra at low temperatures. Furthermore, PL analysis suggested that Eu ions substituted Zn, occupying sites with lower C3v symmetry due to the distortion caused by Eu incorporation. |
| format | Article |
| id | doaj-art-71e4348844b34e5a9369ef09db84951a |
| institution | Kabale University |
| issn | 2166-532X |
| language | English |
| publishDate | 2024-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-71e4348844b34e5a9369ef09db84951a2024-12-04T17:09:06ZengAIP Publishing LLCAPL Materials2166-532X2024-11-011211111112111112-1110.1063/5.0234509Structural and optical properties of Eu-doped ZnO epitaxial thin films grown by pulsed-laser depositionWei-Lun Wei0Chun-Yen Lin1Tzu-Chi Huang2Yi-Chen Li3Yu-Hao Wu4Chien-Yu Lee5Bo-Yi Chen6Gung-Chian Yin7Mau-Tsu Tang8Wu-Ching Chou9Fang-Yuh Lo10Bi-Hsuan Lin11National Synchrotron Radiation Research Center, Hsinchu 300092, TaiwanNational Synchrotron Radiation Research Center, Hsinchu 300092, TaiwanNational Synchrotron Radiation Research Center, Hsinchu 300092, TaiwanNational Synchrotron Radiation Research Center, Hsinchu 300092, TaiwanNational Synchrotron Radiation Research Center, Hsinchu 300092, TaiwanNational Synchrotron Radiation Research Center, Hsinchu 300092, TaiwanNational Synchrotron Radiation Research Center, Hsinchu 300092, TaiwanNational Synchrotron Radiation Research Center, Hsinchu 300092, TaiwanNational Synchrotron Radiation Research Center, Hsinchu 300092, TaiwanDepartment of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, TaiwanDepartment of Physics, National Taiwan Normal University, Taipei 11677, TaiwanNational Synchrotron Radiation Research Center, Hsinchu 300092, TaiwanPulsed-laser deposition was utilized to fabricate Eu-doped ZnO epitaxial films on c-plane sapphire substrates with Eu concentrations ranging from 0.5 to 4.0 at. %. The structural properties were analyzed using x-ray diffraction surface normal radial scans and azimuthal cone scans, which confirmed the epitaxy of the film samples. Reciprocal space mapping was performed on ZnO(101̄1) to visualize the effect of Eu incorporation. X-ray fluorescence mapping confirmed the homogeneous distribution of Zn and Eu, and x-ray absorption near-edge structure spectra directly confirmed the trivalent state of Eu ions. The optical properties were assessed using temperature-dependent photoluminescence (PL). Various defects were identified. With increasing Eu dopant concentration, PL emissions from defects and the Eu 4f-intraband transitions gradually became the predominant features in the PL spectra at low temperatures. Furthermore, PL analysis suggested that Eu ions substituted Zn, occupying sites with lower C3v symmetry due to the distortion caused by Eu incorporation.http://dx.doi.org/10.1063/5.0234509 |
| spellingShingle | Wei-Lun Wei Chun-Yen Lin Tzu-Chi Huang Yi-Chen Li Yu-Hao Wu Chien-Yu Lee Bo-Yi Chen Gung-Chian Yin Mau-Tsu Tang Wu-Ching Chou Fang-Yuh Lo Bi-Hsuan Lin Structural and optical properties of Eu-doped ZnO epitaxial thin films grown by pulsed-laser deposition APL Materials |
| title | Structural and optical properties of Eu-doped ZnO epitaxial thin films grown by pulsed-laser deposition |
| title_full | Structural and optical properties of Eu-doped ZnO epitaxial thin films grown by pulsed-laser deposition |
| title_fullStr | Structural and optical properties of Eu-doped ZnO epitaxial thin films grown by pulsed-laser deposition |
| title_full_unstemmed | Structural and optical properties of Eu-doped ZnO epitaxial thin films grown by pulsed-laser deposition |
| title_short | Structural and optical properties of Eu-doped ZnO epitaxial thin films grown by pulsed-laser deposition |
| title_sort | structural and optical properties of eu doped zno epitaxial thin films grown by pulsed laser deposition |
| url | http://dx.doi.org/10.1063/5.0234509 |
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