System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity

System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity

In this work, a system-technology co-optimization (STCO) of the AlGaN/GaN multimetal gated (MMG) HEMT architecture for third-order transconductance (gm3) engineering and linearity improvement in the presence of fermi-level pinning (FLP) is reported. Through technology computer-aided design (TCAD), c...

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Bibliographic Details
Main Authors: Toiyob Hossain, Tanvir Hossain, A. K. M. Anindya Alam, Bejoy Sikder, Qingyun Xie, Mengyang Yuan, Eiji Yagyu, Koon Hoo Teo, Tomas Palacios, Nadim Chowdhury
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
5G
linearity
AlGaN/GaN
high electron mobility transistor (HEMT)
multi-metal gate (MMG)
fermi level pinning
Online Access:https://ieeexplore.ieee.org/document/10767716/
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