Parametric Modeling and Analysis of High Power IGBT Device
In the high-power IGBT module commutation circuit, under the combined impact of stray inductance and d<italic>i</italic>/d<italic>t</italic>, the IGBT is under significant voltage and current stresses during the processes of switching on and off, which increases system losses...
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| Main Authors: | , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2023-08-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2096-5427.2023.04.006 |
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