Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy

Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy

Abstract The integration of ferroelectric nitride Al1‐xScxN onto GaN templates can enable enhanced functionality in novel high‐power transistors and memory devices. This requires a detailed understanding of ferroelectric domain structures and their impact on the electrical properties. In this contri...

Full description

Saved in:
Bibliographic Details
Main Authors: Niklas Wolff, Georg Schönweger, Md. Redwanul Islam, Ziming Ding, Christian Kübel, Simon Fichtner, Lorenz Kienle
Format: Article
Language:English
Published: Wiley 2025-08-01
Series:Advanced Science
Subjects:
AlScN
ferroelectrics
materials science
scanning transmission electron microscopy
wurtzite‐type ferroelectrics
Online Access:https://doi.org/10.1002/advs.202503827
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items

Similar Items