Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy
Abstract The integration of ferroelectric nitride Al1‐xScxN onto GaN templates can enable enhanced functionality in novel high‐power transistors and memory devices. This requires a detailed understanding of ferroelectric domain structures and their impact on the electrical properties. In this contri...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2025-08-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202503827 |
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