Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories
Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented. By applying our previously developed comprehensive m...
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| Format: | Article |
| Language: | English |
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Wiley
2018-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2018/3708901 |
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| author | Nenad Novkovski Albena Paskaleva Aleksandar Skeparovski Dencho Spassov |
| author_facet | Nenad Novkovski Albena Paskaleva Aleksandar Skeparovski Dencho Spassov |
| author_sort | Nenad Novkovski |
| collection | DOAJ |
| description | Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-κ dielectrics on the J-V characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V), several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. C-V characteristics of stressed (with write and erase pulses) structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur) were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories. |
| format | Article |
| id | doaj-art-6a4f1eff665347caa21b383ead1a579f |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-6a4f1eff665347caa21b383ead1a579f2025-02-03T05:47:48ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242018-01-01201810.1155/2018/37089013708901Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash MemoriesNenad Novkovski0Albena Paskaleva1Aleksandar Skeparovski2Dencho Spassov3Institute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje, MacedoniaInstitute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, BulgariaInstitute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje, MacedoniaInstitute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, BulgariaMethod for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-κ dielectrics on the J-V characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V), several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. C-V characteristics of stressed (with write and erase pulses) structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur) were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.http://dx.doi.org/10.1155/2018/3708901 |
| spellingShingle | Nenad Novkovski Albena Paskaleva Aleksandar Skeparovski Dencho Spassov Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories Advances in Condensed Matter Physics |
| title | Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories |
| title_full | Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories |
| title_fullStr | Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories |
| title_full_unstemmed | Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories |
| title_short | Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories |
| title_sort | analysis of conduction and charging mechanisms in atomic layer deposited multilayered hfo2 al2o3 stacks for use in charge trapping flash memories |
| url | http://dx.doi.org/10.1155/2018/3708901 |
| work_keys_str_mv | AT nenadnovkovski analysisofconductionandchargingmechanismsinatomiclayerdepositedmultilayeredhfo2al2o3stacksforuseinchargetrappingflashmemories AT albenapaskaleva analysisofconductionandchargingmechanismsinatomiclayerdepositedmultilayeredhfo2al2o3stacksforuseinchargetrappingflashmemories AT aleksandarskeparovski analysisofconductionandchargingmechanismsinatomiclayerdepositedmultilayeredhfo2al2o3stacksforuseinchargetrappingflashmemories AT denchospassov analysisofconductionandchargingmechanismsinatomiclayerdepositedmultilayeredhfo2al2o3stacksforuseinchargetrappingflashmemories |