Observation of Mobility Above 2000 cm2/V s in 2DEG at LaInO3/BaSnO3 Interface by Electric‐Double‐Layer Gating
Abstract The LaInO3/BaSnO3 heterostructure has recently emerged as a promising platform for realizing 2D electron gas (2DEG) with unique transport properties, including excellent field‐effect at room temperature. However, there is a limit to improving its mobility due to intrinsic defects including...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400811 |
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