Resonant inelastic tunneling using multiple metallic quantum wells
Tunnel nanojunctions based on inelastic electron tunneling (IET) have been heralded as a breakthrough for ultra-fast integrated light sources. However, the majority of electrons tend to tunnel through a junction elastically, resulting in weak photon-emission power and limited efficiency, which have...
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| Format: | Article |
| Language: | English |
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De Gruyter
2023-06-01
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| Series: | Nanophotonics |
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| Online Access: | https://doi.org/10.1515/nanoph-2023-0231 |
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| _version_ | 1846157303888216064 |
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| author | Zhang Yiyun Lepage Dominic Feng Yiming Zhao Sihan Chen Hongsheng Qian Haoliang |
| author_facet | Zhang Yiyun Lepage Dominic Feng Yiming Zhao Sihan Chen Hongsheng Qian Haoliang |
| author_sort | Zhang Yiyun |
| collection | DOAJ |
| description | Tunnel nanojunctions based on inelastic electron tunneling (IET) have been heralded as a breakthrough for ultra-fast integrated light sources. However, the majority of electrons tend to tunnel through a junction elastically, resulting in weak photon-emission power and limited efficiency, which have hindered their practical applications to date. Resonant tunneling has been proposed as a way to alleviate this limitation, but photon-emissions under resonant tunneling conditions have remained unsatisfactory for practical IET-based light sources due to the inherent contradiction between high photon-emission efficiency and power. In this work, we introduce a novel approach that leverages much stronger resonant tunneling enhancement achieved by multiple metallic quantum wells, which has enabled the internal quantum efficiency to reach ∼1 and photon-emission power to reach ∼0.8 µW/µm2. Furthermore, this method is applicable with different electronic lifetimes ranging from 10 fs to 100 fs simultaneously, bringing practical implementation of IET-based sources one step closer to reality. |
| format | Article |
| id | doaj-art-5716942d491c4f5b8ea8706d40a06dc1 |
| institution | Kabale University |
| issn | 2192-8614 |
| language | English |
| publishDate | 2023-06-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj-art-5716942d491c4f5b8ea8706d40a06dc12024-11-25T11:19:10ZengDe GruyterNanophotonics2192-86142023-06-0112163313332110.1515/nanoph-2023-0231Resonant inelastic tunneling using multiple metallic quantum wellsZhang Yiyun0Lepage Dominic1Feng Yiming2Zhao Sihan3Chen Hongsheng4Qian Haoliang5Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou310027, ChinaInstitut Quantique, Université de Sherbrooke, 2500 Boulevard de l’Université, Sherbrooke, QuébecJ1K 2R1, CanadaInterdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou310027, ChinaInterdisciplinary Center for Quantum Information, State Key Laboratory of Silicon Materials, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou310058, ChinaInterdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou310027, ChinaInterdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou310027, ChinaTunnel nanojunctions based on inelastic electron tunneling (IET) have been heralded as a breakthrough for ultra-fast integrated light sources. However, the majority of electrons tend to tunnel through a junction elastically, resulting in weak photon-emission power and limited efficiency, which have hindered their practical applications to date. Resonant tunneling has been proposed as a way to alleviate this limitation, but photon-emissions under resonant tunneling conditions have remained unsatisfactory for practical IET-based light sources due to the inherent contradiction between high photon-emission efficiency and power. In this work, we introduce a novel approach that leverages much stronger resonant tunneling enhancement achieved by multiple metallic quantum wells, which has enabled the internal quantum efficiency to reach ∼1 and photon-emission power to reach ∼0.8 µW/µm2. Furthermore, this method is applicable with different electronic lifetimes ranging from 10 fs to 100 fs simultaneously, bringing practical implementation of IET-based sources one step closer to reality.https://doi.org/10.1515/nanoph-2023-0231inelastic electron tunnelinginternal quantum efficiencymetallic quantum wellsphoton-emission power |
| spellingShingle | Zhang Yiyun Lepage Dominic Feng Yiming Zhao Sihan Chen Hongsheng Qian Haoliang Resonant inelastic tunneling using multiple metallic quantum wells Nanophotonics inelastic electron tunneling internal quantum efficiency metallic quantum wells photon-emission power |
| title | Resonant inelastic tunneling using multiple metallic quantum wells |
| title_full | Resonant inelastic tunneling using multiple metallic quantum wells |
| title_fullStr | Resonant inelastic tunneling using multiple metallic quantum wells |
| title_full_unstemmed | Resonant inelastic tunneling using multiple metallic quantum wells |
| title_short | Resonant inelastic tunneling using multiple metallic quantum wells |
| title_sort | resonant inelastic tunneling using multiple metallic quantum wells |
| topic | inelastic electron tunneling internal quantum efficiency metallic quantum wells photon-emission power |
| url | https://doi.org/10.1515/nanoph-2023-0231 |
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