Integrated PIN modulator and photodetector operating in the mid-infrared range from 5.5 μm to 10 μm

Integrated PIN modulator and photodetector operating in the mid-infrared range from 5.5 μm to 10 μm

This study reports the experimental demonstration of the first waveguide-integrated SiGe modulator using a PIN diode operating in a wide spectral range of the mid-infrared region. At the wavelength of 10 µm, an extinction ratio up to 10 dB is obtained in injection regime and 3.2 dB in depletion regi...

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Bibliographic Details
Main Authors: Nguyen Thi Hao Nhi, Turpaud Victor, Koompai Natnicha, Peltier Jonathan, Calcaterra Stefano, Isella Giovanni, Coudevylle Jean-René, Alonso-Ramos Carlos, Vivien Laurent, Frigerio Jacopo, Marris-Morini Delphine
Format: Article
Language:English
Published: De Gruyter 2024-01-01
Series:Nanophotonics
Subjects:
silicon photonics
electro-optical modulator
photodetector
silicon-germanium
pin diode
mid-infrared
Online Access:https://doi.org/10.1515/nanoph-2023-0692
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https://doi.org/10.1515/nanoph-2023-0692

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