The characteristics and polarization effects in AlInGaN barrier GaN MISHEMT with various compositions of group III elements

The characteristics and polarization effects in AlInGaN barrier GaN MISHEMT with various compositions of group III elements

Abstract This study investigates the impact of varying compositions of AlxInyGazN barrier layers on the performance of AlxInyGazN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) using Sentaurus TCAD simulation. By systematically increasing the compositions of Al and I...

Full description

Saved in:
Bibliographic Details
Main Authors: Catherine Langpoklakpam, Chang-Ching Tu, Edward Yi Chang, Chun-Hsiung Lin, Hao Chung Kuo
Format: Article
Language:English
Published: Nature Portfolio 2025-07-01
Series:Scientific Reports
Subjects:
AlxInyGazN
MISHEMT
Polarization
Stress
Technology Computer-Aided design (TCAD)
Lattice matched
Online Access:https://doi.org/10.1038/s41598-025-02995-9
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doi.org/10.1038/s41598-025-02995-9

Similar Items