Ultra-large nonlinear parameters and all-optical modulation of a transition metal dichalcogenides on silicon waveguide
Abstract We integrate monolayer TMDCs into silicon-on-insulation (SOI) waveguides and dielectric-loaded surface plasmon polariton (DLSPP) waveguides to enhance nonlinear parameters ( $$\gamma$$ ) of silicon-based waveguides. By optimizing the waveguide geometry, we have achieved significantly improv...
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Nature Portfolio
2025-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-83898-z |
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| author | Tianyang Ding Siqin Xu Xianlong Sun |
| author_facet | Tianyang Ding Siqin Xu Xianlong Sun |
| author_sort | Tianyang Ding |
| collection | DOAJ |
| description | Abstract We integrate monolayer TMDCs into silicon-on-insulation (SOI) waveguides and dielectric-loaded surface plasmon polariton (DLSPP) waveguides to enhance nonlinear parameters ( $$\gamma$$ ) of silicon-based waveguides. By optimizing the waveguide geometry, we have achieved significantly improved $$\gamma$$ . In MoSe2-on-SOI and MoSe2-in-DLSPP waveguide with optimized geometry, the maximum $$\gamma$$ at the excitonic resonant peak ( $$\lambda$$ p) is 5001.87 W−1m−1 and 119111.94 W−1m−1 respectively for each case. Based on this, we designed all-optical TMDCs-on-SOI phase and extinction waveguide modulators, achieving $$\pi$$ -phase and 3 dB modulation with millimeter-scale modulation lengths under an optical pump intensity of 1 GW/ $$\textrm{cm}^{2}$$ at the optical communication wavelengths of 1310 nm and 1550 nm. At the $$\lambda$$ p of MoSe2, a modulation length of only 75 $$\upmu$$ m is required for $$\pi$$ -phase modulation, while a modulation length of 1.36 mm is sufficient for 3 dB modulation. Our work provides new insights for achieving miniaturized and low-power optical communication and networking applications. |
| format | Article |
| id | doaj-art-4ef64b0d2ffa48858b7a232a6f270f0a |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-4ef64b0d2ffa48858b7a232a6f270f0a2025-01-05T12:22:51ZengNature PortfolioScientific Reports2045-23222025-01-0115111110.1038/s41598-024-83898-zUltra-large nonlinear parameters and all-optical modulation of a transition metal dichalcogenides on silicon waveguideTianyang Ding0Siqin Xu1Xianlong Sun2MOE Key Laboratory of Laser Life Science, Institute of Laser Life Science, College of Biophotonics, South China Normal UniversityMOE Key Laboratory of Laser Life Science, Institute of Laser Life Science, College of Biophotonics, South China Normal UniversityMOE Key Laboratory of Laser Life Science, Institute of Laser Life Science, College of Biophotonics, South China Normal UniversityAbstract We integrate monolayer TMDCs into silicon-on-insulation (SOI) waveguides and dielectric-loaded surface plasmon polariton (DLSPP) waveguides to enhance nonlinear parameters ( $$\gamma$$ ) of silicon-based waveguides. By optimizing the waveguide geometry, we have achieved significantly improved $$\gamma$$ . In MoSe2-on-SOI and MoSe2-in-DLSPP waveguide with optimized geometry, the maximum $$\gamma$$ at the excitonic resonant peak ( $$\lambda$$ p) is 5001.87 W−1m−1 and 119111.94 W−1m−1 respectively for each case. Based on this, we designed all-optical TMDCs-on-SOI phase and extinction waveguide modulators, achieving $$\pi$$ -phase and 3 dB modulation with millimeter-scale modulation lengths under an optical pump intensity of 1 GW/ $$\textrm{cm}^{2}$$ at the optical communication wavelengths of 1310 nm and 1550 nm. At the $$\lambda$$ p of MoSe2, a modulation length of only 75 $$\upmu$$ m is required for $$\pi$$ -phase modulation, while a modulation length of 1.36 mm is sufficient for 3 dB modulation. Our work provides new insights for achieving miniaturized and low-power optical communication and networking applications.https://doi.org/10.1038/s41598-024-83898-z |
| spellingShingle | Tianyang Ding Siqin Xu Xianlong Sun Ultra-large nonlinear parameters and all-optical modulation of a transition metal dichalcogenides on silicon waveguide Scientific Reports |
| title | Ultra-large nonlinear parameters and all-optical modulation of a transition metal dichalcogenides on silicon waveguide |
| title_full | Ultra-large nonlinear parameters and all-optical modulation of a transition metal dichalcogenides on silicon waveguide |
| title_fullStr | Ultra-large nonlinear parameters and all-optical modulation of a transition metal dichalcogenides on silicon waveguide |
| title_full_unstemmed | Ultra-large nonlinear parameters and all-optical modulation of a transition metal dichalcogenides on silicon waveguide |
| title_short | Ultra-large nonlinear parameters and all-optical modulation of a transition metal dichalcogenides on silicon waveguide |
| title_sort | ultra large nonlinear parameters and all optical modulation of a transition metal dichalcogenides on silicon waveguide |
| url | https://doi.org/10.1038/s41598-024-83898-z |
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