Defects Passivation and Performance Enhancement of AlGaN/GaN HEMTs by Supercritical Hydrogen Treatment
In this paper, supercritical hydrogen treatment is used to passivate the defects of normally-on type AlGaN/GaN high electron mobility transistors. By comparing the electrical characteristics of devices before and after the experiment, the treated devices have shown larger on-state current, a negativ...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11080297/ |
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