Indium-flush technique for C-band InAs/InP quantum dots

Indium-flush technique for C-band InAs/InP quantum dots

High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize high-performance telecom C-band lasers. In general, a longer emission (>1550 nm) with a broad spectral character has been obtained with InAs/InP QDs. Here, we proposed the use of the indium-flush (IF) method...

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Bibliographic Details
Main Authors: Jiajing Yuan, Calum Dear, Hui Jia, Jae-Seong Park, Yaonan Hou, Khalil El Hajraoui, Haotian Zeng, Huiwen Deng, Junjie Yang, Mingchu Tang, Siming Chen, Quentin M. Ramasse, Qiang Li, Alwyn Seeds, Huiyun Liu
Format: Article
Language:English
Published: AIP Publishing LLC 2024-12-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0239360
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http://dx.doi.org/10.1063/5.0239360

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