Two-channel microwave power switch construction on the basis of electrically active semiconductor structures
When constructing the fast-acting two-channel microwave switch, it is difficult to use p–i–n-diodes due to inertia of processes in such structures at change of control voltage polarity for providing of deep modulation. Under the practical realization of the microwave switches on p–i–n-diodes, the re...
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| Format: | Article |
| Language: | English |
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Politehperiodika
2014-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | https://tkea.com.ua/index.php/journal/article/view/320 |
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| author | Yu. N. Lavrich S. V. Plaksin V. Ya. Kris L. M. Pogorelaya I. I. Sokolovskiy |
| author_facet | Yu. N. Lavrich S. V. Plaksin V. Ya. Kris L. M. Pogorelaya I. I. Sokolovskiy |
| author_sort | Yu. N. Lavrich |
| collection | DOAJ |
| description | When constructing the fast-acting two-channel microwave switch, it is difficult to use p–i–n-diodes due to inertia of processes in such structures at change of control voltage polarity for providing of deep modulation. Under the practical realization of the microwave switches on p–i–n-diodes, the requirements to the operating speed of the output signal and to the frequency range are in conflict with each other.
The optimum decision may be to use the bulk (without p–n-junctions) two-electrode semiconductor structures based on the effect of intervalley transfer of electrons (TEDs) and chalcogenide-glass-semiconductors (CGS-diodes) with high operating speed and stability at considerable power levels in the wide frequency band.
The paper presents the construction of the two-channel microwave switch in the three-centimetre range of wave lengths based on bulk semiconductor structures having negative differential conductivity (NDC) of N- and S-type, and realizing the functions of peak power modulator on a TED-diode and the switch on a CGS-diode respectively. |
| format | Article |
| id | doaj-art-4b71c2f8cba94f37a3c55d7c91e47cab |
| institution | Kabale University |
| issn | 2225-5818 2309-9992 |
| language | English |
| publishDate | 2014-06-01 |
| publisher | Politehperiodika |
| record_format | Article |
| series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| spelling | doaj-art-4b71c2f8cba94f37a3c55d7c91e47cab2025-08-20T03:47:41ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182309-99922014-06-012–3242710.15222/TKEA2014.2-3.24320Two-channel microwave power switch construction on the basis of electrically active semiconductor structuresYu. N. Lavrich0S. V. Plaksin1V. Ya. Kris2L. M. Pogorelaya3I. I. Sokolovskiy4Institute of transport systems and technologies of NAS of Ukraine ("TRANSMAG"), Dnipro, UkraineInstitute of transport systems and technologies of NAS of Ukraine ("TRANSMAG"), Dnipro, UkraineInstitute of transport systems and technologies of NAS of Ukraine ("TRANSMAG"), Dnipro, UkraineInstitute of transport systems and technologies of NAS of Ukraine ("TRANSMAG"), Dnipro, UkraineInstitute of transport systems and technologies of NAS of Ukraine ("TRANSMAG"), Dnipro, UkraineWhen constructing the fast-acting two-channel microwave switch, it is difficult to use p–i–n-diodes due to inertia of processes in such structures at change of control voltage polarity for providing of deep modulation. Under the practical realization of the microwave switches on p–i–n-diodes, the requirements to the operating speed of the output signal and to the frequency range are in conflict with each other. The optimum decision may be to use the bulk (without p–n-junctions) two-electrode semiconductor structures based on the effect of intervalley transfer of electrons (TEDs) and chalcogenide-glass-semiconductors (CGS-diodes) with high operating speed and stability at considerable power levels in the wide frequency band. The paper presents the construction of the two-channel microwave switch in the three-centimetre range of wave lengths based on bulk semiconductor structures having negative differential conductivity (NDC) of N- and S-type, and realizing the functions of peak power modulator on a TED-diode and the switch on a CGS-diode respectively.https://tkea.com.ua/index.php/journal/article/view/320negative differential conductivitycommutationmodulationmicrowave power |
| spellingShingle | Yu. N. Lavrich S. V. Plaksin V. Ya. Kris L. M. Pogorelaya I. I. Sokolovskiy Two-channel microwave power switch construction on the basis of electrically active semiconductor structures Tekhnologiya i Konstruirovanie v Elektronnoi Apparature negative differential conductivity commutation modulation microwave power |
| title | Two-channel microwave power switch construction on the basis of electrically active semiconductor structures |
| title_full | Two-channel microwave power switch construction on the basis of electrically active semiconductor structures |
| title_fullStr | Two-channel microwave power switch construction on the basis of electrically active semiconductor structures |
| title_full_unstemmed | Two-channel microwave power switch construction on the basis of electrically active semiconductor structures |
| title_short | Two-channel microwave power switch construction on the basis of electrically active semiconductor structures |
| title_sort | two channel microwave power switch construction on the basis of electrically active semiconductor structures |
| topic | negative differential conductivity commutation modulation microwave power |
| url | https://tkea.com.ua/index.php/journal/article/view/320 |
| work_keys_str_mv | AT yunlavrich twochannelmicrowavepowerswitchconstructiononthebasisofelectricallyactivesemiconductorstructures AT svplaksin twochannelmicrowavepowerswitchconstructiononthebasisofelectricallyactivesemiconductorstructures AT vyakris twochannelmicrowavepowerswitchconstructiononthebasisofelectricallyactivesemiconductorstructures AT lmpogorelaya twochannelmicrowavepowerswitchconstructiononthebasisofelectricallyactivesemiconductorstructures AT iisokolovskiy twochannelmicrowavepowerswitchconstructiononthebasisofelectricallyactivesemiconductorstructures |