High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN Heterojunction
Wide-bandgap semiconductors like GaN, known for their superior photoresponse and detection capabilities in the ultraviolet range, represent a foundational component in the design of advanced photodetectors, where the integration of materials with distinct spectral sensitivities into heterojunctions...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-11-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/14/22/1819 |
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| author | Ang Bian Songchao Shen Chen Yang Jun Dai |
| author_facet | Ang Bian Songchao Shen Chen Yang Jun Dai |
| author_sort | Ang Bian |
| collection | DOAJ |
| description | Wide-bandgap semiconductors like GaN, known for their superior photoresponse and detection capabilities in the ultraviolet range, represent a foundational component in the design of advanced photodetectors, where the integration of materials with distinct spectral sensitivities into heterojunctions is pivotal for next-generation device innovation. A high-performance self-powered dual-mode ultraviolet photodetector based on a (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN heterojunction was fabricated via spin coating. The device exhibits outstanding UV sensitivity under both positive and negative bias, achieving a responsivity of 1.39 A/W and a detectivity of 8.71 × 10<sup>10</sup> Jones under 365 nm UV illumination. The built-in electric field at the heterojunction interface enables self-powered operation, achieving a rapid rise time of 46.9 ms and a decay time of 55.9 ms. These findings offer valuable insights into the development and application of perovskite and wide-bandgap semiconductor heterojunctions in optoelectronic devices. |
| format | Article |
| id | doaj-art-4b02890ed6bc4a309ffbe2f5b6e2e36a |
| institution | Kabale University |
| issn | 2079-4991 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-4b02890ed6bc4a309ffbe2f5b6e2e36a2024-11-26T18:16:27ZengMDPI AGNanomaterials2079-49912024-11-011422181910.3390/nano14221819High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN HeterojunctionAng Bian0Songchao Shen1Chen Yang2Jun Dai3School of Science, Jiangsu University of Science and Technology, Zhenjiang 212100, ChinaSchool of Science, Jiangsu University of Science and Technology, Zhenjiang 212100, ChinaSchool of Science, Jiangsu University of Science and Technology, Zhenjiang 212100, ChinaSchool of Science, Jiangsu University of Science and Technology, Zhenjiang 212100, ChinaWide-bandgap semiconductors like GaN, known for their superior photoresponse and detection capabilities in the ultraviolet range, represent a foundational component in the design of advanced photodetectors, where the integration of materials with distinct spectral sensitivities into heterojunctions is pivotal for next-generation device innovation. A high-performance self-powered dual-mode ultraviolet photodetector based on a (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN heterojunction was fabricated via spin coating. The device exhibits outstanding UV sensitivity under both positive and negative bias, achieving a responsivity of 1.39 A/W and a detectivity of 8.71 × 10<sup>10</sup> Jones under 365 nm UV illumination. The built-in electric field at the heterojunction interface enables self-powered operation, achieving a rapid rise time of 46.9 ms and a decay time of 55.9 ms. These findings offer valuable insights into the development and application of perovskite and wide-bandgap semiconductor heterojunctions in optoelectronic devices.https://www.mdpi.com/2079-4991/14/22/1819perovskitewide-bandgap semiconductorultraviolet detectorheterojunction |
| spellingShingle | Ang Bian Songchao Shen Chen Yang Jun Dai High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN Heterojunction Nanomaterials perovskite wide-bandgap semiconductor ultraviolet detector heterojunction |
| title | High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN Heterojunction |
| title_full | High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN Heterojunction |
| title_fullStr | High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN Heterojunction |
| title_full_unstemmed | High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN Heterojunction |
| title_short | High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN Heterojunction |
| title_sort | high performance self powered dual mode ultraviolet photodetector based on pea sub 2 sub pbi sub 4 sub gan heterojunction |
| topic | perovskite wide-bandgap semiconductor ultraviolet detector heterojunction |
| url | https://www.mdpi.com/2079-4991/14/22/1819 |
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