High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN Heterojunction
Wide-bandgap semiconductors like GaN, known for their superior photoresponse and detection capabilities in the ultraviolet range, represent a foundational component in the design of advanced photodetectors, where the integration of materials with distinct spectral sensitivities into heterojunctions...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/14/22/1819 |
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