High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN Heterojunction
Wide-bandgap semiconductors like GaN, known for their superior photoresponse and detection capabilities in the ultraviolet range, represent a foundational component in the design of advanced photodetectors, where the integration of materials with distinct spectral sensitivities into heterojunctions...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/14/22/1819 |
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| Summary: | Wide-bandgap semiconductors like GaN, known for their superior photoresponse and detection capabilities in the ultraviolet range, represent a foundational component in the design of advanced photodetectors, where the integration of materials with distinct spectral sensitivities into heterojunctions is pivotal for next-generation device innovation. A high-performance self-powered dual-mode ultraviolet photodetector based on a (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN heterojunction was fabricated via spin coating. The device exhibits outstanding UV sensitivity under both positive and negative bias, achieving a responsivity of 1.39 A/W and a detectivity of 8.71 × 10<sup>10</sup> Jones under 365 nm UV illumination. The built-in electric field at the heterojunction interface enables self-powered operation, achieving a rapid rise time of 46.9 ms and a decay time of 55.9 ms. These findings offer valuable insights into the development and application of perovskite and wide-bandgap semiconductor heterojunctions in optoelectronic devices. |
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| ISSN: | 2079-4991 |