Noise Spectroscopy and Electrical Transport In NbO2 Memristors with Dual Resistive Switching
Abstract Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next‐generation memory devices and neuromorphic computing systems. NbO2‐based memristors exhibit two regions of NDR at room temperature, making them promising candidates for...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400877 |
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