Resolving the Relaxation of Volatile Valence Change Memory
Abstract Memristive devices based on the valence change mechanism are highly interesting candidates for data storage and hardware implementation of synapses in neuromorphic circuits. Although long‐term retention is often required for data storage applications, a slight resistance drift of the low re...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-12-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400062 |
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| _version_ | 1841553142783672320 |
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| author | Johannes Hellwig Carsten Funck Sebastian Siegel Alexandros Sarantopoulos Dimitrios Spithouris Stephan Menzel Regina Dittmann |
| author_facet | Johannes Hellwig Carsten Funck Sebastian Siegel Alexandros Sarantopoulos Dimitrios Spithouris Stephan Menzel Regina Dittmann |
| author_sort | Johannes Hellwig |
| collection | DOAJ |
| description | Abstract Memristive devices based on the valence change mechanism are highly interesting candidates for data storage and hardware implementation of synapses in neuromorphic circuits. Although long‐term retention is often required for data storage applications, a slight resistance drift of the low resistive state (LRS) is observed even for stable devices. For other devices, the LRS has been observed to decay rapidly to the high resistive state (HRS). These types of devices are of interest for neuromorphic circuits where short‐term plasticity is required. In this work, the LRS relaxation of volatile, crystalline Pt/SrTiO3/Nb:SrTiO3: devices is investigated in detail, yielding time constants ranging from milliseconds to seconds. The decay is analyzed in terms of the Gibbs free energy gradient for the contribution of oxygen ion migration. A relaxation model based on drift‐diffusion dynamics is presented. The model may serve as a tool for developing guidelines and design rules for future volatile memristive technology based on Schottky barrier mediated electron transport. |
| format | Article |
| id | doaj-art-456a494925984651bab6972d62408ace |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-456a494925984651bab6972d62408ace2025-01-09T11:51:13ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-12-011012n/an/a10.1002/aelm.202400062Resolving the Relaxation of Volatile Valence Change MemoryJohannes Hellwig0Carsten Funck1Sebastian Siegel2Alexandros Sarantopoulos3Dimitrios Spithouris4Stephan Menzel5Regina Dittmann6Forschungszentrum Jülich Gmbh PGI‐7 & JARA‐FIT 52428 Jülich GermanyForschungszentrum Jülich Gmbh PGI‐7 & JARA‐FIT 52428 Jülich GermanyForschungszentrum Jülich Gmbh PGI‐7 & JARA‐FIT 52428 Jülich GermanyForschungszentrum Jülich Gmbh PGI‐7 & JARA‐FIT 52428 Jülich GermanyForschungszentrum Jülich Gmbh PGI‐7 & JARA‐FIT 52428 Jülich GermanyForschungszentrum Jülich Gmbh PGI‐7 & JARA‐FIT 52428 Jülich GermanyForschungszentrum Jülich Gmbh PGI‐7 & JARA‐FIT 52428 Jülich GermanyAbstract Memristive devices based on the valence change mechanism are highly interesting candidates for data storage and hardware implementation of synapses in neuromorphic circuits. Although long‐term retention is often required for data storage applications, a slight resistance drift of the low resistive state (LRS) is observed even for stable devices. For other devices, the LRS has been observed to decay rapidly to the high resistive state (HRS). These types of devices are of interest for neuromorphic circuits where short‐term plasticity is required. In this work, the LRS relaxation of volatile, crystalline Pt/SrTiO3/Nb:SrTiO3: devices is investigated in detail, yielding time constants ranging from milliseconds to seconds. The decay is analyzed in terms of the Gibbs free energy gradient for the contribution of oxygen ion migration. A relaxation model based on drift‐diffusion dynamics is presented. The model may serve as a tool for developing guidelines and design rules for future volatile memristive technology based on Schottky barrier mediated electron transport.https://doi.org/10.1002/aelm.202400062memristive deviceretentionVCM |
| spellingShingle | Johannes Hellwig Carsten Funck Sebastian Siegel Alexandros Sarantopoulos Dimitrios Spithouris Stephan Menzel Regina Dittmann Resolving the Relaxation of Volatile Valence Change Memory Advanced Electronic Materials memristive device retention VCM |
| title | Resolving the Relaxation of Volatile Valence Change Memory |
| title_full | Resolving the Relaxation of Volatile Valence Change Memory |
| title_fullStr | Resolving the Relaxation of Volatile Valence Change Memory |
| title_full_unstemmed | Resolving the Relaxation of Volatile Valence Change Memory |
| title_short | Resolving the Relaxation of Volatile Valence Change Memory |
| title_sort | resolving the relaxation of volatile valence change memory |
| topic | memristive device retention VCM |
| url | https://doi.org/10.1002/aelm.202400062 |
| work_keys_str_mv | AT johanneshellwig resolvingtherelaxationofvolatilevalencechangememory AT carstenfunck resolvingtherelaxationofvolatilevalencechangememory AT sebastiansiegel resolvingtherelaxationofvolatilevalencechangememory AT alexandrossarantopoulos resolvingtherelaxationofvolatilevalencechangememory AT dimitriosspithouris resolvingtherelaxationofvolatilevalencechangememory AT stephanmenzel resolvingtherelaxationofvolatilevalencechangememory AT reginadittmann resolvingtherelaxationofvolatilevalencechangememory |