A Cross-Scale Electrothermal Co-Simulation Approach for Power MOSFETs at Device–Package–Heatsink–Board Levels

A Cross-Scale Electrothermal Co-Simulation Approach for Power MOSFETs at Device–Package–Heatsink–Board Levels

This paper proposes a cross-scale simulation approach for evaluating the steady-state electrothermal performance of power MOSFETs at the device–package–heatsink–board (DPHB) level. A co-simulation framework is designed by employing the iterative process of power loss and chip temperature to bridge t...

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Bibliographic Details
Main Authors: Yuxuan Dai, Jiafei Yao, Jing Chen, Qingyou Qian, Maolin Zhang, Jun Zhang, Qing Yao, Chenyang Huang, Mingshun Sun, Yufeng Guo
Format: Article
Language:English
Published: MDPI AG 2024-10-01
Series:Micromachines
Subjects:
chip temperature
drain current
device–package–heatsink–board level
electrothermal co-simulation
power MOSFETs
Online Access:https://www.mdpi.com/2072-666X/15/11/1336
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