Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance
This work proposes a unique design of charge plasma based junctionless SiGe source TFET with dual cavity and ferroelectric gate dielectric. The biosensor works on the principle of dielectric modulation for label-free detection, where the cavity lies under the source and gate metal just around the tu...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10830522/ |
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