Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance
This work proposes a unique design of charge plasma based junctionless SiGe source TFET with dual cavity and ferroelectric gate dielectric. The biosensor works on the principle of dielectric modulation for label-free detection, where the cavity lies under the source and gate metal just around the tu...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10830522/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1841536168377712640 |
|---|---|
| author | Dipshika Das Rudra Sankar Dhar Pradip Kumar Ghosh Yash Sharma Amit Banerjee |
| author_facet | Dipshika Das Rudra Sankar Dhar Pradip Kumar Ghosh Yash Sharma Amit Banerjee |
| author_sort | Dipshika Das |
| collection | DOAJ |
| description | This work proposes a unique design of charge plasma based junctionless SiGe source TFET with dual cavity and ferroelectric gate dielectric. The biosensor works on the principle of dielectric modulation for label-free detection, where the cavity lies under the source and gate metal just around the tunneling junction of the dual gate TFET. Nanocavity above the source and gate regions act as reservoir of biomolecules (to be detected) around the tunneling junction, letting the drain current modulate. Cavity dimensions and its placement have been optimized to achieve better current sensitivity. Dual gate architecture with laterally split dielectric is used to overcome the short channel impact and to enhance the current ratio. The biosensor can recognize neutral, positive, and negative charges with the highest drain current sensitivity and ION/IOFF ratio for biomolecule gelatin. It engages the principle of negative capacitance for better subthreshold swing and ON current for identification of biomolecules such as gelatin (k = 12), keratin (k = 8), streptavidin (k = 2.1), bacteriophage T7 (k = 6.3), and APTES (k = 3.57) at low voltage biasing. Finally, RF analyzes are carried out to explore the benefits of using negative capacitance where the biosensor acts as an intrinsic voltage amplifier exhibiting superior gain-bandwidth product (GBP) and cut-off frequency (fT), indicating its potential for high-speed operation and real-time sensing applications. The research yields repeatable outcomes for several calculated analyses. |
| format | Article |
| id | doaj-art-41e445de1a334837a22b8b8f4442517c |
| institution | Kabale University |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj-art-41e445de1a334837a22b8b8f4442517c2025-01-15T00:03:21ZengIEEEIEEE Access2169-35362025-01-01137426743610.1109/ACCESS.2025.352689210830522Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative CapacitanceDipshika Das0https://orcid.org/0000-0001-7790-994XRudra Sankar Dhar1https://orcid.org/0000-0002-6571-3808Pradip Kumar Ghosh2https://orcid.org/0000-0002-6343-416XYash Sharma3https://orcid.org/0009-0007-1277-9364Amit Banerjee4https://orcid.org/0000-0001-9612-4523Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl, Mizoram, IndiaDepartment of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl, Mizoram, IndiaDepartment of Electronics and Communication Engineering, Techno International New Town, Kolkata, IndiaGraduate School of Science and Technology, Shizuoka University, Hamamatsu, JapanPhysics Department, Microsystem Design-Integration Laboratory, Bidhan Chandra College, Asansol, West Bengal, IndiaThis work proposes a unique design of charge plasma based junctionless SiGe source TFET with dual cavity and ferroelectric gate dielectric. The biosensor works on the principle of dielectric modulation for label-free detection, where the cavity lies under the source and gate metal just around the tunneling junction of the dual gate TFET. Nanocavity above the source and gate regions act as reservoir of biomolecules (to be detected) around the tunneling junction, letting the drain current modulate. Cavity dimensions and its placement have been optimized to achieve better current sensitivity. Dual gate architecture with laterally split dielectric is used to overcome the short channel impact and to enhance the current ratio. The biosensor can recognize neutral, positive, and negative charges with the highest drain current sensitivity and ION/IOFF ratio for biomolecule gelatin. It engages the principle of negative capacitance for better subthreshold swing and ON current for identification of biomolecules such as gelatin (k = 12), keratin (k = 8), streptavidin (k = 2.1), bacteriophage T7 (k = 6.3), and APTES (k = 3.57) at low voltage biasing. Finally, RF analyzes are carried out to explore the benefits of using negative capacitance where the biosensor acts as an intrinsic voltage amplifier exhibiting superior gain-bandwidth product (GBP) and cut-off frequency (fT), indicating its potential for high-speed operation and real-time sensing applications. The research yields repeatable outcomes for several calculated analyses.https://ieeexplore.ieee.org/document/10830522/Biosensorcharge plasmadielectric modulationsensitivityheterojunctiondual gate |
| spellingShingle | Dipshika Das Rudra Sankar Dhar Pradip Kumar Ghosh Yash Sharma Amit Banerjee Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance IEEE Access Biosensor charge plasma dielectric modulation sensitivity heterojunction dual gate |
| title | Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance |
| title_full | Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance |
| title_fullStr | Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance |
| title_full_unstemmed | Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance |
| title_short | Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance |
| title_sort | sensitivity analysis of biosensor based sige source dual gate tunnel fet having negative capacitance |
| topic | Biosensor charge plasma dielectric modulation sensitivity heterojunction dual gate |
| url | https://ieeexplore.ieee.org/document/10830522/ |
| work_keys_str_mv | AT dipshikadas sensitivityanalysisofbiosensorbasedsigesourcedualgatetunnelfethavingnegativecapacitance AT rudrasankardhar sensitivityanalysisofbiosensorbasedsigesourcedualgatetunnelfethavingnegativecapacitance AT pradipkumarghosh sensitivityanalysisofbiosensorbasedsigesourcedualgatetunnelfethavingnegativecapacitance AT yashsharma sensitivityanalysisofbiosensorbasedsigesourcedualgatetunnelfethavingnegativecapacitance AT amitbanerjee sensitivityanalysisofbiosensorbasedsigesourcedualgatetunnelfethavingnegativecapacitance |