Tailoring Hydrogenation to Enhance Defect Suppression and Charge Transport in Hydrogenated Amorphous Silicon for Flexible Photodetectors
Abstract Visible‐light photodetectors (VPDs) garner significant attention due to their diverse applications in optical communication. However, conventional VPDs struggle to achieve both transparency and flexibility, limiting their use in emerging technologies. Hydrogenated amorphous silicon (a‐Si:H)...
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| Format: | Article |
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Wiley
2025-08-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202504199 |
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| author | Ye‐ji Jeong Kyeong‐jin Hyun Hee‐Won Jang Jong‐won Yun Yong‐Hun Kim Woon Ik Park Soo‐Won Choi Jung‐Dae Kwon |
| author_facet | Ye‐ji Jeong Kyeong‐jin Hyun Hee‐Won Jang Jong‐won Yun Yong‐Hun Kim Woon Ik Park Soo‐Won Choi Jung‐Dae Kwon |
| author_sort | Ye‐ji Jeong |
| collection | DOAJ |
| description | Abstract Visible‐light photodetectors (VPDs) garner significant attention due to their diverse applications in optical communication. However, conventional VPDs struggle to achieve both transparency and flexibility, limiting their use in emerging technologies. Hydrogenated amorphous silicon (a‐Si:H) offers a promising platform for flexible optoelectronics for compatibility with substrates, although temperature reduction causes degradation of electrical and optical properties due to insufficient hydrogen passivation. In this study, the effect of the hydrogen‐to‐silane (H2/SiH4; f ratio) gas is systematically investigated ratio on the microstructural, optical, and electrical properties of a‐Si:H films synthesized at an ultra‐low temperature of 90 °C using plasma‐enhanced chemical vapor deposition (PECVD). Raman and Fourier‐transform infrared (FT‐IR) spectroscopy reveal that an optimized H2/SiH4 ratio minimizes Si─H2 bonding, effectively reducing defect density and improving film stability. Spectroscopic ellipsometry confirms that this ratio optimizes the refractive index and optical bandgap, enhancing light absorption. Electrical measurements demonstrate that photodiodes with the optimized a‐Si:H layer exhibit superior photosensitivity and suppressed dark current (f2: 20.6 and f8: 2.70 × 10−10 A, respectively), attributed to improved carrier transport and reduced Shockley–Read–Hall (SRH) recombination. Furthermore, flexible photodetectors maintain high mechanical reliability under repeated bending cycles. These findings highlight the potential of ultra‐low‐temperature PECVD a‐Si:H films for high‐performance, flexible photodetectors. |
| format | Article |
| id | doaj-art-40eea75a9b4c4e88a8f04cf7fe221d2e |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Wiley |
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| series | Advanced Science |
| spelling | doaj-art-40eea75a9b4c4e88a8f04cf7fe221d2e2025-08-23T14:13:12ZengWileyAdvanced Science2198-38442025-08-011231n/an/a10.1002/advs.202504199Tailoring Hydrogenation to Enhance Defect Suppression and Charge Transport in Hydrogenated Amorphous Silicon for Flexible PhotodetectorsYe‐ji Jeong0Kyeong‐jin Hyun1Hee‐Won Jang2Jong‐won Yun3Yong‐Hun Kim4Woon Ik Park5Soo‐Won Choi6Jung‐Dae Kwon7Energy & Environment Materials Division Korea Institute of Materials Science Changwon Gyeongnam 51508 Republic of KoreaEnergy & Environment Materials Division Korea Institute of Materials Science Changwon Gyeongnam 51508 Republic of KoreaEnergy & Environment Materials Division Korea Institute of Materials Science Changwon Gyeongnam 51508 Republic of KoreaEnergy & Environment Materials Division Korea Institute of Materials Science Changwon Gyeongnam 51508 Republic of KoreaEnergy & Environment Materials Division Korea Institute of Materials Science Changwon Gyeongnam 51508 Republic of KoreaDepartment of Materials Science and Engineering Pukyong National University Busan 48513 Republic of KoreaEnergy & Environment Materials Division Korea Institute of Materials Science Changwon Gyeongnam 51508 Republic of KoreaEnergy & Environment Materials Division Korea Institute of Materials Science Changwon Gyeongnam 51508 Republic of KoreaAbstract Visible‐light photodetectors (VPDs) garner significant attention due to their diverse applications in optical communication. However, conventional VPDs struggle to achieve both transparency and flexibility, limiting their use in emerging technologies. Hydrogenated amorphous silicon (a‐Si:H) offers a promising platform for flexible optoelectronics for compatibility with substrates, although temperature reduction causes degradation of electrical and optical properties due to insufficient hydrogen passivation. In this study, the effect of the hydrogen‐to‐silane (H2/SiH4; f ratio) gas is systematically investigated ratio on the microstructural, optical, and electrical properties of a‐Si:H films synthesized at an ultra‐low temperature of 90 °C using plasma‐enhanced chemical vapor deposition (PECVD). Raman and Fourier‐transform infrared (FT‐IR) spectroscopy reveal that an optimized H2/SiH4 ratio minimizes Si─H2 bonding, effectively reducing defect density and improving film stability. Spectroscopic ellipsometry confirms that this ratio optimizes the refractive index and optical bandgap, enhancing light absorption. Electrical measurements demonstrate that photodiodes with the optimized a‐Si:H layer exhibit superior photosensitivity and suppressed dark current (f2: 20.6 and f8: 2.70 × 10−10 A, respectively), attributed to improved carrier transport and reduced Shockley–Read–Hall (SRH) recombination. Furthermore, flexible photodetectors maintain high mechanical reliability under repeated bending cycles. These findings highlight the potential of ultra‐low‐temperature PECVD a‐Si:H films for high‐performance, flexible photodetectors.https://doi.org/10.1002/advs.202504199defect passivationflexible electronicshydrogenated amorphous siliconlow temperaturesphotodetectors |
| spellingShingle | Ye‐ji Jeong Kyeong‐jin Hyun Hee‐Won Jang Jong‐won Yun Yong‐Hun Kim Woon Ik Park Soo‐Won Choi Jung‐Dae Kwon Tailoring Hydrogenation to Enhance Defect Suppression and Charge Transport in Hydrogenated Amorphous Silicon for Flexible Photodetectors Advanced Science defect passivation flexible electronics hydrogenated amorphous silicon low temperatures photodetectors |
| title | Tailoring Hydrogenation to Enhance Defect Suppression and Charge Transport in Hydrogenated Amorphous Silicon for Flexible Photodetectors |
| title_full | Tailoring Hydrogenation to Enhance Defect Suppression and Charge Transport in Hydrogenated Amorphous Silicon for Flexible Photodetectors |
| title_fullStr | Tailoring Hydrogenation to Enhance Defect Suppression and Charge Transport in Hydrogenated Amorphous Silicon for Flexible Photodetectors |
| title_full_unstemmed | Tailoring Hydrogenation to Enhance Defect Suppression and Charge Transport in Hydrogenated Amorphous Silicon for Flexible Photodetectors |
| title_short | Tailoring Hydrogenation to Enhance Defect Suppression and Charge Transport in Hydrogenated Amorphous Silicon for Flexible Photodetectors |
| title_sort | tailoring hydrogenation to enhance defect suppression and charge transport in hydrogenated amorphous silicon for flexible photodetectors |
| topic | defect passivation flexible electronics hydrogenated amorphous silicon low temperatures photodetectors |
| url | https://doi.org/10.1002/advs.202504199 |
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