Phonon dispersion of buckled two-dimensional GaN
Abstract Group-III nitride semiconductors such as GaN have various important applications based on their three-dimensional form. Previous work has demonstrated the realization of buckled two-dimensional GaN, which can be used in GaN-based nanodevices. However, the understanding of buckled two-dimens...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-11-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-54921-8 |
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| author | Zhenyu Zhang Tao Wang Hailing Jiang Xifan Xu Jinlin Wang Ziruo Wang Fang Liu Ye Yu Yuantao Zhang Ping Wang Peng Gao Bo Shen Xinqiang Wang |
| author_facet | Zhenyu Zhang Tao Wang Hailing Jiang Xifan Xu Jinlin Wang Ziruo Wang Fang Liu Ye Yu Yuantao Zhang Ping Wang Peng Gao Bo Shen Xinqiang Wang |
| author_sort | Zhenyu Zhang |
| collection | DOAJ |
| description | Abstract Group-III nitride semiconductors such as GaN have various important applications based on their three-dimensional form. Previous work has demonstrated the realization of buckled two-dimensional GaN, which can be used in GaN-based nanodevices. However, the understanding of buckled two-dimensional GaN remains limited due to the difficulties in experimental characterization. Here, for the first time, we have experimentally determined the phonon dispersion of buckled two-dimensional GaN by using monochromatic electron energy loss spectroscopy in conjunction with scanning transmission electron microscopy. A phonon band gap of ~40 meV between the acoustic and optical phonon branches is identified for buckled two-dimensional GaN. This phonon band gap is significantly larger than that of ~20 meV for the tetrahedral-coordinated three-dimensional GaN. Our theoretical calculations confirm this larger phonon band gap. Our findings provide critical insights into the phonon behavior of buckled two-dimensional GaN, which can be used to guide high-performance thermal management in GaN-based high-power devices. |
| format | Article |
| id | doaj-art-3e917b575b5148e4a741b31af7096ad2 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-3e917b575b5148e4a741b31af7096ad22024-12-01T12:36:19ZengNature PortfolioNature Communications2041-17232024-11-011511810.1038/s41467-024-54921-8Phonon dispersion of buckled two-dimensional GaNZhenyu Zhang0Tao Wang1Hailing Jiang2Xifan Xu3Jinlin Wang4Ziruo Wang5Fang Liu6Ye Yu7Yuantao Zhang8Ping Wang9Peng Gao10Bo Shen11Xinqiang Wang12State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin UniversityState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin UniversityState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityElectron Microscopy Laboratory, School of Physics, Peking UniversityState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityAbstract Group-III nitride semiconductors such as GaN have various important applications based on their three-dimensional form. Previous work has demonstrated the realization of buckled two-dimensional GaN, which can be used in GaN-based nanodevices. However, the understanding of buckled two-dimensional GaN remains limited due to the difficulties in experimental characterization. Here, for the first time, we have experimentally determined the phonon dispersion of buckled two-dimensional GaN by using monochromatic electron energy loss spectroscopy in conjunction with scanning transmission electron microscopy. A phonon band gap of ~40 meV between the acoustic and optical phonon branches is identified for buckled two-dimensional GaN. This phonon band gap is significantly larger than that of ~20 meV for the tetrahedral-coordinated three-dimensional GaN. Our theoretical calculations confirm this larger phonon band gap. Our findings provide critical insights into the phonon behavior of buckled two-dimensional GaN, which can be used to guide high-performance thermal management in GaN-based high-power devices.https://doi.org/10.1038/s41467-024-54921-8 |
| spellingShingle | Zhenyu Zhang Tao Wang Hailing Jiang Xifan Xu Jinlin Wang Ziruo Wang Fang Liu Ye Yu Yuantao Zhang Ping Wang Peng Gao Bo Shen Xinqiang Wang Phonon dispersion of buckled two-dimensional GaN Nature Communications |
| title | Phonon dispersion of buckled two-dimensional GaN |
| title_full | Phonon dispersion of buckled two-dimensional GaN |
| title_fullStr | Phonon dispersion of buckled two-dimensional GaN |
| title_full_unstemmed | Phonon dispersion of buckled two-dimensional GaN |
| title_short | Phonon dispersion of buckled two-dimensional GaN |
| title_sort | phonon dispersion of buckled two dimensional gan |
| url | https://doi.org/10.1038/s41467-024-54921-8 |
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