Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors
Abstract AlScN emerges as a promising material for ferroelectric field-effect transistors due to its high coercive field (>6 MV/cm). However, its high remanent polarization (>100 μC/cm2) can degrade memory window and retention, limiting its use in memory applications. This study introduces an...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-08-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-62904-6 |
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